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STD6N10 PDF File ( Datasheet )

STMicroelectronics
STD6N10T4
Description: 6A, 100V, 0.45 Ohm, N-channel, Si, Power, Mosfet, TO-252AA, DPAK-3

PDF Datasheet
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STD6N10 Description
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

STD6N10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STD6N10 s s s s s s s s V DSS 100 V R DS( on) < 0.45 Ω ID 6A s s TYPICAL RDS(on) = 0.35 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE APPLICATION ORIENTED CHARACTERIZATION THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX ”-1”) SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX ”T4”)
ST Microelectronics
ST Microelectronics



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