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| STD5N20 Description |
| N - CHANNEL POWER MOS TRANSISTOR
®
STD5N20
N - CHANNEL 200V - 0.7Ω - 5A - TO-251, TO-252 POWER MOS TRANSISTOR
TYPE STD5N20
s s s s s s s s
V DSS 200 V
R DS(on) < 0.8 Ω
ID 5 A
s
s
TYPICAL RDS(on) = 0.7 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE HIGH CURRENT CAPABILITY 150oC OPERATING TEMPERATURE APPLICATION ORIENTED CHARACTERIZATION THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX ”-1”) SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE &
ST Microelectronics |
| N-CHANNEL 200V - 0.65 - 5A DPAK STripFET MOSFET
STD5N20L
N-CHANNEL 200V - 0.65Ω - 5A DPAK STripFET™ MOSFET
Table 1: General Features
TYPE STD5N20L
s s s s
Figure 1: Package
ID 5A Pw 33 W
VDSS 200 V
RDS(on) < 0.7 Ω
TYPICAL RDS(on) = 0.65 Ω @ 5V CONDUCTION LOSSES REDUCED LOW INPUT CAPACIATNCE LOW THRESHOLD DEVICE
1
DPAK
3
DESCRIPTION The STD5N20L utilizes the latest advanced design rules of ST’s proprietary STripFET™ technology. This is suitable for the most demanding DC Motor Control and lighting application.
Figure 2: In
STMicroelectronics |
| Related Part Number |
STD40N01 | STD334S STD901T | STD80N10F7 STD7NK30Z | STD5N80K5 |
| DataSheet.es | 2020 | Contacto |