STD2NB60 PDF File ( Datasheet )

STD2NB60 N - CHANNEL ENHANCEMENT MODE PowerMESH™ MOSFET TYPE STD2NB60 s s s s s V DSS 600 V R DS(on) < 3.6 Ω ID 2.6 A TYPICAL RDS(on) = 3.3 Ω EXTREMELY HIGH dv, dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 2 1 1 3 DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s pro