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STD20N06 PDF File ( Datasheet )
STMicroelectronics
STD20N06T4
Power Field-Effect Transistor, 20A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
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| STD20N06 Description |
| N-CHANNEL MOSFET
STD20N06
N - CHANNEL ENHANCEMENT MODE ”ULTRA HIGH DENSITY” POWER MOS TRANSISTOR
PRELIMINARY DATA TYPE STD20N06
s s s s s s s s
V DSS 60 V
R DS( on) < 0.03 Ω
ID 20 A (*)
s
TYPICAL RDS(on) = 0.026 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC HIGH CURRENT CAPABILITY o 175 C OPERATING TEMPERATURE HIGH dV, dt RUGGEDNESS THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX ”-1”) SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (
 ST Microelectronics |
| Related Part Number |
STD80N6F6 | STD20L01A STD85N10F7AG | STD102S STD878T4 | STD10N20 |
| DataSheet.es | 2020 | Contacto |