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| STD1NK60 Description |
| N-CHANNEL POWER MOSFET
STD1NK60 - STD1NK60-1 STQ1HNK60R
N-CHANNEL 600V - 8Ω - 1A DPAK , IPAK , TO-92 SuperMESH™Power MOSFET
TYPE STD1NK60 STD1NK60-1 STQ1HNK60R
s s s s s
VDSS 600 V 600 V 600 V
RDS(on) < 8.5 Ω < 8.5 Ω < 8.5 Ω
ID 1A 1A 0.4 A
Pw 30 W 30 W 3W
1
3 2
3 1
TYPICAL RDS(on) = 8 Ω EXTREMELY HIGH dv, dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED NEW HIGH VOLTAGE BENCHMARK
IPAK
DPAK
DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well es
ST Microelectronics |
| N-CHANNEL MOSFET
STD1NK60 - STD1NK60-1
STQ1HNK60R - STN1HNK60
N-CHANNEL 600V - 8Ω - 1A DPAK, TO-92, IPAK, SOT-223 SuperMESH™ MOSFET
Table 1: General Features
TYPE STD1NK60 STD1NK60-1 STQ1HNK60R STN1HNK60
s s s s s s
Figure 1: Package
ID 1A 1A 0.4 A 0.4 A Pw 30 W 30 W 3W 3.3 W Ω Ω Ω Ω
VDSS 600 600 600 600 V V V V
RDS(on) < < < < 8.5 8.5 8.5 8.5
3 1
TYPICAL RDS(on) = 8 Ω EXTREMELY HIGH dv, dt CAPABILITY ESD IMPROVED CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIM
STMicroelectronics |
| Related Part Number |
STD1501 | STD1805T4 STD10P10F6 | STD03N20 STD8200 | STD30L01A |
| DataSheet.es | 2020 | Contacto |