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STD1NK60 PDF File ( Datasheet )

STMicroelectronics
STD1NK60T4
Power MOSFET, N Channel, 600 V, 500 mA, 8.5 ohm, TO-252 (DPAK), Surface Mount
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STD1NK60 Description
N-CHANNEL POWER MOSFET

STD1NK60 - STD1NK60-1 STQ1HNK60R N-CHANNEL 600V - 8Ω - 1A DPAK , IPAK , TO-92 SuperMESH™Power MOSFET TYPE STD1NK60 STD1NK60-1 STQ1HNK60R s s s s s VDSS 600 V 600 V 600 V RDS(on) < 8.5 Ω < 8.5 Ω < 8.5 Ω ID 1A 1A 0.4 A Pw 30 W 30 W 3W 1 3 2 3 1 TYPICAL RDS(on) = 8 Ω EXTREMELY HIGH dv, dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED NEW HIGH VOLTAGE BENCHMARK IPAK DPAK DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well es

ST Microelectronics
ST Microelectronics
N-CHANNEL MOSFET

STD1NK60 - STD1NK60-1 STQ1HNK60R - STN1HNK60 N-CHANNEL 600V - 8Ω - 1A DPAK, TO-92, IPAK, SOT-223 SuperMESH™ MOSFET Table 1: General Features TYPE STD1NK60 STD1NK60-1 STQ1HNK60R STN1HNK60 s s s s s s Figure 1: Package ID 1A 1A 0.4 A 0.4 A Pw 30 W 30 W 3W 3.3 W Ω Ω Ω Ω VDSS 600 600 600 600 V V V V RDS(on) < < < < 8.5 8.5 8.5 8.5 3 1 TYPICAL RDS(on) = 8 Ω EXTREMELY HIGH dv, dt CAPABILITY ESD IMPROVED CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIM

STMicroelectronics
STMicroelectronics




Related Part Number

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