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| STD1NB80-1 Description |
| N-CHANNEL POWER MOSFET
STD1NB80-1
N - CHANNEL 800V - 16Ω - 1A - IPAK PowerMESH™ MOSFET
PRELIMINARY DATA TYPE STD1NB80-1
s s s s s
V DSS 800 V
R DS(on) < 20 Ω
ID 1A
TYPICAL RDS(on) = 16 Ω EXTREMELY HIGH dv, dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED
3 2 1
DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout couple
ST Microelectronics |
| Related Part Number |
STD7NM64N | STD80N6F6 STD85N10F7AG | STD102S STD878T4 | STD10N20 |
| DataSheet.es | 2020 | Contacto |