STD1NB80 PDF File ( Datasheet )

STD1NB80 N - CHANNEL 800V - 16Ω - 1A - DPAK, IPAK PowerMESH™ MOSFET PRELIMINARY DATA TYPE STD1NB80 s s s s s s V DSS 800 V R DS(on) < 20 Ω ID 1A TYPICAL RDS(on) = 16 Ω EXTREMELY HIGH dv, dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED ADD SUFFIX "T4" FOR ORDERING IN TAPE&REEL IPAK TO-251 (Suffix "-1") 3 3 2 1 1 DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MO

STD1NB80-1 N - CHANNEL 800V - 16Ω - 1A - IPAK PowerMESH™ MOSFET PRELIMINARY DATA TYPE STD1NB80-1 s s s s s V DSS 800 V R DS(on) < 20 Ω ID 1A TYPICAL RDS(on) = 16 Ω EXTREMELY HIGH dv, dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 2 1 DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout couple