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| STD1NB60 Description |
| N-CHANNEL POWER MOSFET
®
STD1NB60
N - CHANNEL 600V - 7.4Ω - 1A - IPAK, DPAK PowerMESH™ MOSFET
PRELIMINARY DATA
TYPE STD1NB60
s s s s s
V DSS 600 V
R DS(on) < 8.5 Ω
ID 1A
TYPICAL RDS(on) = 7.4 Ω EXTREMELY HIGH dv, dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED
3 2 1
1 3
DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending stri
ST Microelectronics |
| Related Part Number |
STD334S | STD30L01A STD40N01 | STD2596 STD10NF30 | STD1807 |
| DataSheet.es | 2020 | Contacto |