STAP1011-180 PDF File ( Datasheet )

STAP1011-180 RF power transistor the LdmoST family, N-channel enhancement-mode lateral MOSFETs Features - - - - - Excellent thermal stability Common source configuration push-pull POUT = 180W with 10 dB gain @ 1030 MH- 36 V, 100 sec - 10% Plastic package In compliance with the 2002, 95, EC european directive Description The STAP1011-180 is a common source N-channel enhancement-mode lateral field-effect RF power transistor. It is designed for 1030-1090 MH- avionics applications. STAP1011-18