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SPP2301A PDF File ( Datasheet )

VBsemi
SPP2301AS23RG-VB
-20V, -4A, Rds(on), 57M¦¸@4.5V, 83M¦¸@2.5V, 12VGS(¡ÀV), -0.81VTH(V) , \'SOT23-3 Pmosfet, Led
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SPP2301A Description
P-Channel Enhancement Mode MOSFET

SPP2301A P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP2301A is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very smal

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