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SPN6335S36RGB PDF File ( Datasheet )

VBsemi
SPN6335S36RGB-VB
N¡ªchannel, 20V, 2A, Rds(on), 150M¦¸@4.5V, 170M¦¸@2.5V, 8VGS(¡ÀV), 0.8VTH(V) , SC70-6
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SPN6335S36RGB Description
Dual N-Channel Enhancement Mode MOSFET

SPN6335 Dual N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN6335 is the Dual N-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching

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