SPN2622S26RGB PDF File ( Datasheet )

SPN2622 Dual N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN2622 is the Dual N-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching