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| SPI10N10 Description |
| SIPMOS Power-Transistor
Preliminary data
SPI10N10 SPP10N10,SPB10N10
SIPMOS Power-Transistor
Feature
N-Channel Enhancement mode 175°C operating temperature Avalanche rated dv, dt rated
P-TO262-3-1 P-TO263-3-2
Product Summary VDS R DS(on) ID 100 170 10.3
P-TO220-3-1
V A
m
Type SPP10N10 SPB10N10 SPI10N10
Package P-TO220-3-1 P-TO263-3-2 P-TO262-3-1
Ordering Code Q67042-S4118 Q67042-S4119 Q67042-S4120
Marking 10N10 10N10 10N10
Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Continuous dra
Infineon Technologies |
| SIPMOS Power-Transistor
Preliminary data
SPI10N10 SPP10N10,SPB10N10
SIPMOS Power-Transistor
Feature
N-Channel Enhancement mode 175°C operating temperature Avalanche rated dv, dt rated
P-TO262-3-1 P-TO263-3-2
Product Summary VDS R DS(on) ID 100 170 10.3
P-TO220-3-1
V m A
Type SPP10N10 SPB10N10 SPI10N10
Package P-TO220-3-1 P-TO263-3-2 P-TO262-3-1
Ordering Code Q67042-S4118 Q67042-S4119 Q67042-S4120
Marking 10N10 10N10 10N10
Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Continuous dr
Infineon Technologies |
| Related Part Number |
SPIA4020 | SPIA3015 SPIA3020 | SPIA4012 SPIA4016 | SPIA3010 |
| DataSheet.es | 2020 | Contacto |