SP2108 PDF File ( Datasheet )

Green Product Sa mHop Microelectronics C orp. Dual N-Channel Enhancement Mode Field Effect Transistor SP2108 Ver 1.0 PRODUCT SUMMARY VDSS ID RDS(ON) (mΩ) Max 100V 1.2A 811 @ VGS=10V 932 @ VGS=4.5V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. PDFN 5x6 PIN1 D2 5 D2 6 D1 7 D1 8 4 G2 3 S2 2 G1 1 S1 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted) Symbol VDS VGS ID IDM EAS PD Parameter Drain-Source Voltage G