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| SIHP18N50C Description |
| Power MOSFET, Transistor
Power MOSFET
SiHP18N50C
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) at TJ max. RDS(on) ( ) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
560 VGS = 10 V
76 21 29 Single
TO-220AB
0.225 D
FEATURES Low Figure-of-Merit Ron x Qg 100 % Avalanche Tested High Peak Current Capability dV, dt Ruggedness Improved trr, Qrr Improved Gate Charge High Power Dissipations Capability Compliant to RoHS Directive 2002, 95, EC
S D G
G
S N-Channel MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free
TO-2
Vishay |
| Related Part Number |
SIHG80N60E | SiHJ7N65E SIHG33N65EF | SiHH21N60E SiHFD120 | SIHA24N65EF |
| DataSheet.es | 2020 | Contacto |