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| SIHG40N60E Description |
| MOSFET, Transistor
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SiHG40N60E
Vishay Siliconix
E Series Power MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max. RDS(on) typ. ( ) at 25 °C Qg max. (nC) Qgs (nC) Qgd (nC) Configuration
650 VGS = 10 V
197 33 54 Single
0.065
TO-247AC
D
S
D G
G
S N-Channel MOSFET
FEATURES Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss) Reduced switching and conduction losses Ultra low gate charge (Qg) Avalanche energy rated (UIS) Material categorization: for definitions of compliance
please see
Vishay |
| Related Part Number |
SiHP21N60EF | SiHB21N65EF SiHB35N60E | SiHA21N60EF SIHF35N60E | SiHS90N65E |
| DataSheet.es | 2020 | Contacto |