SIHG24N65E PDF File ( Datasheet )

SiHG24N65E www.vishay.com Vishay Siliconix E Series Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) max. at 25 °C ( ) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 122 21 37 Single D FEATURES 700 0.145 Halogen-free According to IEC 61249-2-21 Definition Low Figure-of-Merit (FOM) Ron x Qg Low Input Capacitance (Ciss) Reduced Switching and Conduction Losses Ultra Low Gate Charge (Qg) Avalanche Energy Rated (UIS) Compliant to RoHS Directive 2002, 95, EC TO-247AC APPL

www.vishay.com SiHG24N65EF Vishay Siliconix E Series Power MOSFET with Fast Body Diode PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) max. at 25 °C ( ) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 700 VGS = 10 V 122 17 36 Single 0.156 D TO-247AC G S D G S N-Channel MOSFET FEATURES Fast body diode MOSFET using E series technology Reduced trr, Qrr, and IRRM Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss) Low switching losses due to reduced Qrr Ultra low gate charge (