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| SIHG16N50C Description |
| Power MOSFET, Transistor
SiHG16N50C
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max. RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 560 V VGS = 10 V 68 17.6 21.8 Single
D
FEATURES
Low Figure-of-Merit Ron x Qg
0.38
100 % Avalanche Tested Gate Charge Improved Trr, Qrr Improved Compliant to RoHS Directive 2002, 95, EC
TO-247AC
G S D G S N-Channel MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free TO-247AC SiHG16N50C-E3
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PAR
Vishay |
| Related Part Number |
SiHH14N60E | SiHG21N65EF SiHG28N60EF | SiHL620 SIHG40N60E | SIHG70N60EF |
| DataSheet.es | 2020 | Contacto |