SIHFI9620G PDF File ( Datasheet )

IRFI9620G, SiHFI9620G Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration - 200 VGS = - 10 V 15 3.2 8.4 Single S FEATURES Isolated Package High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) Sink to Lead Creepage Dist. = 4.8 mm P-Channel Dynamic dV, dt Low Thermal Resistance Lead (Pb)-free Available Available 1.5 RoHS* COMPLIANT TO-220 FULLPAK DESCRIPTION Third generation Power MOSFETs from Vishay provide the design