SIHF640 PDF File ( Datasheet )

Power MOSFET IRF640, SiHF640 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 200 VGS = 10 V 70 13 39 Single 0.18 TO-220AB D G S D G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb FEATURES Dynamic dV, dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Compliant to RoHS Directive 2002, 95, EC Available RoHS* COMPLIANT DESCRIPTION Third generation Power MOSFE

www.vishay.com IRF640S, IRF640L, SiHF640S, SiHF640L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) ( ) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 200 VGS = 10 V 70 13 39 Single 0.18 I2PAK (TO-262) D2PAK (TO-26 D G DS G D S G S N-Channel MOSFET FEATURES Surface mount Low-profile through-hole Available in tape and reel Available Dynamic dV, dt rating 150 °C operating temperature Available Fast switching Fully avalanche rated Material categorizati