SIHF530 PDF File ( Datasheet )

Power MOSFET IRF530, SiHF530 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) ( ) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 100 VGS = 10 V 26 5.5 11 Single 0.16 TO-220AB D S D G G S N-Channel MOSFET FEATURES Dynamic dV, dt Rating Repetitive Avalanche Rated 175 °C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements Compliant to RoHS Directive 2002, 95, EC Available RoHS* COMPLIANT DESCRIPTION Third generation Power MOSFETs from Vishay provid

IRF530S, SiHF530S Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) ( ) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 26 5.5 11 Single D FEATURES 100 0.16 Halogen-free According to IEC 61249-2-21 Definition Surface Mount Available in Tape and Reel Dynamic dV, dt Rating Repetitive Avalanche Rated 175 °C Operating Temperature Fast Switching Ease of Paralleling Compliant to RoHS Directive 2002, 95, EC D2PAK (TO-263) DESCRIPTION G G D S S N-Channel MOSFET T