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| SIHB20N50E Description |
| E Series Power MOSFET
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SiHB20N50E
Vishay Siliconix
E Series Power MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max. RDS(on) max. at 25 °C (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration
550 VGS = 10 V
92 10 19 Single
0.184
D2PAK (TO-263)
D
GD S
G
S N-Channel MOSFET
FEATURES Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss) Reduced switching and conduction losses Low gate charge (Qg) Avalanche energy rated (UIS) Material categorization: for definitions of compliance
please see w
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| Related Part Number |
SiHH14N60E | SiHG21N65EF SiHG28N60EF | SiHL620 SIHG40N60E | SIHG70N60EF |
| DataSheet.es | 2020 | Contacto |