SIGC32T120R3 PDF File ( Datasheet )

SIGC32T120R3 IGBT Chip FEATURES: 1200V Trench + Field Stop technology low turn-off losses short tail current positive temperature coefficient easy paralleling 3 This chip is used for: power module C Applications: drives G E Chip Type SIGC32T120R3 VCE 1200V ICn 25A Die Size 6.5 x 4.87 mm2 Package sawn on foil Ordering Code Q67050A4104-A001 MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total , active Thickness Wafer size Flat position Max.possible chip

SIGC32T120R3E IGBT3 Power Chip Features: 1200V Trench + Field Stop technology low turn-off losses short tail current positive temperature coefficient easy paralleling This chip is used for: power modules Applications: drives Chip Type VCE IC SIGC32T120R3E 1200V 25A Die Size 6.5 x 4.87 mm2 C G E Package sawn on foil Mechanical Parameters Raster size Emitter pad size (incl. gate pad) Gate pad size Area total Thickness Wafer size Max.possible chips per wafer Passivation frontside P