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SIGC223T120R2CL PDF File ( Datasheet )

Infineon
SIGC223T120R2CLX1SA1
Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel
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SIGC223T120R2CL Description
IGBT Chip

SIGC223T120R2CL IGBT Chip in NPT-technology FEATURES: 1200V NPT technology 180 m chip short circuit prove positive temperature coefficient easy paralleling This chip is used for: IGBT-Modules BSM150GB120DLC Applications: drives C G E Chip Type VCE ICn Die Size 14.4 x 15.5 mm2 Package sawn on foil Ordering Code Q67050-A4286A101 SIGC223T120R2CL 1200V 150A MECHANICAL PARAMETER: Raster size Area total , active Emitter pad size Gate pad size Thickness Wafer size Flat position Ma

Infineon Technologies
Infineon Technologies




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