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SIGC20T120L PDF File ( Datasheet )

Infineon
SIGC20T120LEX1SA1
Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel
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SIGC20T120L Description
IGBT Chip

SIGC20T120L IGBT Chip FEATURES: 1200V Trench + Field Stop technology 120 m chip low turn-off losses short tail current positive temperature coefficient easy paralleling 3 This chip is used for: power module C Applications: drives G E Chip Type SIGC20T120L VCE 1200V ICn 15A Die Size 4.41 x 4.47 mm2 Package sawn on foil Ordering Code Q67050A4268-A101 MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total , active Thickness Wafer size Flat position Max.po

Infineon Technologies
Infineon Technologies
IGBT, Insulated Gate Bipolar Transistor

IGBT TRENCHSTOPTM IGBT3 Chip SIGC20T120LE Data Sheet Industrial Power Control SIGC20T120LE Table of Contents Features and Applications...............................................................................................................................3 Mechanical Parameters....................................................................................................................................3 Maximum Ratings .................................................................

Infineon
Infineon




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