SIGC20T120E PDF File ( Datasheet )

SIGC20T120E IGBT3 Power Chip Features: 1200V Trench + Field Stop technology low turn-off losses short tail current positive temperature coefficient easy paralleling This chip is used for: power modules Applications: drives Chip Type SIGC20T120E VCE IC 1200V 15A Die Size 4.41 x 4.47 mm2 C G E Package sawn on foil Mechanical Parameters Raster size Emitter pad size (incl. gate pad) Gate pad size Area total Thickness Wafer size Max.possible chips per wafer Passivation frontside Pad