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SIGC156T60NR2C PDF File ( Datasheet )
Infineon
SIGC156T60NR2CX1SA4
Insulated Gate Bipolar Transistor, 200A I(C), 600V V(BR)CES, N-Channel
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| SIGC156T60NR2C Description |
| IGBT Chip
SIGC156T60NR2C
IGBT Chip in NPT-technology
FEATURES: 600V NPT technology 100 m chip short circuit prove positive temperature coefficient easy paralleling
C
This chip is used for: IGBT-Modules Applications: drives
G
E
Chip Type
VCE
ICn 200A
Die Size 12.5 x 12.5 mm2
Package sawn on foil
Ordering Code Q67050-A4013A001
SIGC156T60NR2C 600V
MECHANICAL PARAMETER: Raster size Area total , active Emitter pad size Gate pad size Thickness Wafer size Flat position Max.possible chips per
 Infineon Technologies |
| Related Part Number |
SIGC41T120R3LE | SIGC18T60NC SIGC121T60NR2C | SIGC57T120R3 SIGC25T120C | SIGC144T170R2C |
| DataSheet.es | 2020 | Contacto |