DataSheet.es    

SIGC156T120R2CL PDF File ( Datasheet )

Infineon
SIGC156T120R2CLX1SA1
Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel
Powered by Octopart



 



SIGC156T120R2CL Description
IGBT Chip

SIGC156T120R2CL IGBT Chip in NPT-technology FEATURES: 1200V NPT technology 180 m chip low turn-off losses positive temperature coefficient easy paralleling integrated gate resistor This chip is used for: power module BSM100GD120DLC Applications: drives C G E Chip Type VCE ICn Die Size 12.59 X 12.59 mm2 Package sawn on foil Ordering Code Q67041A4663-A003 SIGC156T120R2CL 1200V 100A MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total , active Thickness

Infineon Technologies
Infineon Technologies




Related Part Number

SIGC41T120R3LE  |  SIGC81T120R2CL  

SIGC32T120R3L  |  SIGC158T120R3LE  

SIGC101T170R3E  |  SIGC42T120C  



DataSheet.es    |   2020   |  Contacto