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SIGC12T60NC PDF File ( Datasheet )

Infineon
SIGC12T60NCX1SA5
Insulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES, N-Channel
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SIGC12T60NC Description
IGBT Chip

Preliminary SIGC12T60NC IGBT Chip in NPT-technology FEATURES: 600V NPT technology 100 m chip positive temperature coefficient easy paralleling C This chip is used for: IGBT Modules Applications: drives G E Chip Type SIGC12T60NC VCE 600V ICn 10A Die Size 3.5 x 3.5 mm2 Package sawn on foil Ordering Code Q67041-A4688A001 MECHANICAL PARAMETER: Raster size Area total , active Emitter pad size Gate pad size Thickness Wafer size Flat position Max.possible chips per wafer Passivation

Infineon Technologies
Infineon Technologies




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