SIGC12T120LE PDF File ( Datasheet )

SIGC12T120LE IGBT3 Power Chip Features: 1200V Trench + Field Stop technology low turn-off losses short tail current positive temperature coefficient easy paralleling This chip is used for: power module Applications: drives C G E Chip Type SIGC12T120LE VCE 1200V ICn 8A Die Size 3.54 x 3.5 mm2 Package sawn on foil MECHANICAL PARAMETER Raster size Emitter pad size (incl. gate pad) Gate pad size Area total , active Thickness Wafer size Max.possible chips per wafer Passivation front