SIGC12T120L PDF File ( Datasheet )

SIGC12T120L IGBT Chip FEATURES: 1200V Trench & Field Stop technology 120 m chip low turn-off losses short tail current positive temperature coefficient easy paralleling 3 This chip is used for: power module C Applications: drives G E Chip Type SIGC12T120L VCE 1200V ICn 8A Die Size 3.54 x 3.5 mm2 Package sawn on foil Ordering Code Q67050A4269-A101 MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total , active Thickness Wafer size Flat position Max.poss

SIGC12T120LE IGBT3 Power Chip Features: 1200V Trench + Field Stop technology low turn-off losses short tail current positive temperature coefficient easy paralleling This chip is used for: power module Applications: drives C G E Chip Type SIGC12T120LE VCE 1200V ICn 8A Die Size 3.54 x 3.5 mm2 Package sawn on foil MECHANICAL PARAMETER Raster size Emitter pad size (incl. gate pad) Gate pad size Area total , active Thickness Wafer size Max.possible chips per wafer Passivation front