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SIE860DF PDF File ( Datasheet )

Vishay
SIE860DF-T1-E3
Power Field-Effect Transistor, 38A I(D), 30V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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SIE860DF Description
N-Channel 30-V (D-S) MOSFET

New Product N-Channel 30-V (D-S) MOSFET SiE860DF Vishay Siliconix PRODUCT SUMMARY ID (A) VDS (V) RDS(on) (Ω)e Silicon Package Limit Limit Qg (Typ.) 0.0021 at VGS = 10 V 178 30 0.0028 at VGS = 4.5 V 154 60a 34 nC 60a Package Drawing www.vishay.com, doc 68796 10 9 8 D GS 7 S PolarPAK 6 D6 7 8 9 10 D D S GD FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Gen III Power MOSFET Ultra Low Thermal Resistance Using TopExposed PolarPAK® Package for DoubleSided
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