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| SIA519EDJ Description |
| N- and P-Channel 20-V (D-S) MOSFET
SiA519EDJ
Vishay Siliconix
N- and P-Channel 20-V (D-S) MOSFET
FEATURES PRODUCT SUMMARY
VDS (V) N-Channel 20 RDS(on) ( ) 0.040 at VGS = 4.5 V 0.065 at VGS = 2.5 V 0.090 at VGS = - 4.5 V 0.137 at VGS = - 2.5 V ID (A) 4.5
a
Qg (Typ.) 3.7 nC
4.5a - 4.5a - 4.5a
P-Channel
- 20
5.3 nC
TrenchFET® Power MOSFETs Typical ESD Protection: N-Channel 2000 V P-Channel 1000 V 100 % Rg Tested Material categorization: For definitions of compliance please see www.vishay.com, doc 99912
PowerPAK® SC-70-
Vishay |
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SIAA40DJ | SiA778DJ SiA931DJ | SIA912DJ SIA918EDJ | SIA468DJ |
| DataSheet.es | 2020 | Contacto |