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SI9804DY PDF File ( Datasheet )
Vishay
SI9804DY
Power Field-Effect Transistor, 7.8A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Datasheet| Distributor | Stock | 1 | Link | ||
|---|---|---|---|---|---|
| Win Source | 8,000 | Visit Site | |||
| SHENGYU ELECTRONICS | 8,472 | 0.1531 | Visit Site | ||
| Run Hong Electronics | 7,924 | 0.9486 | Visit Site | ||
| Quest | 1,075 | 3.42 | Visit Site | ||
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| SI9804DY Description |
| N-Channel Reduced Qg/ Fast Switching MOSFET
Si9804DY
Vishay Siliconix
N-Channel Reduced Qg, Fast Switching MOSFET
PRODUCT SUMMARY
VDS (V)
25
rDS(on) (W)
0.023 @ VGS = 4.5 V 0.030 @ VGS = 3.0 V
ID (A)
"7.8 "6.8
D
SO-8
S S S G 1 2 3 4 Top View S N-Channel MOSFET 8 7 6 5 D D D D G
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipa
 Vishay Siliconix |
| Related Part Number |
SI9955DY | Si9948DY Si9183DT-27-T1 | SI9910 Si9181DQ-30-T1-E3 | Si9986CY-T1 |
| DataSheet.es | 2020 | Contacto |