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SI6966EDQ PDF File ( Datasheet )

Vishay
SI6966EDQ-T1
Power Field-Effect Transistor, 5.2A I(D), 20V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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SI6966EDQ Description
N-Channel 2.5-V (G-S) MOSFET

SPICE Device Model Si6966EDQ Vishay Siliconix N-Channel 2.5-V (G-S) MOSFET, ESD Protected CHARACTERISTICS N-Channel Vertical DMOS Macro Model (Subcircuit Model) Level 3 MOS Apply for both Linear and Switching Application Accurate over the 55 to 125°C Temperature Range Model the Gate Charge, Transient, and Diode Reverse Recovery Characteristics DESCRIPTION The attached spice model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is ex
Vishay Siliconix
Vishay Siliconix



Related Part Number

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Si6404DQ  |  SI6955ADQ  

SI6821DQ  |  SI6433BDQ  



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