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SI4965DY-T1 PDF File ( Datasheet )

Vishay
SI4965DY-T1
Power Field-Effect Transistor, 8A I(D), 8V, 0.021ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

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SI4965DY-T1 Description
Dual P-Channel 1.8-V (G-S) MOSFET

Si4965DY Vishay Siliconix Dual P-Channel 1.8-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) -8 rDS(on) (W) 0.021 @ VGS = - 4.5 V 0.027 @ VGS = - 2.5 V 0.040 @ VGS = - 1.8 V ID (A) - 8.0 - 7.0 - 5.8 S1 S2 SO-8 S1 G1 S2 G2 1 2 3 4 Top View Ordering Information: Si4965DY Si4965DY-T1 (with Tape and Reel) 8 7 6 5 D1 D1 D2 D2 G1 G2 D1 D1 D2 D2 P-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous
Vishay Siliconix
Vishay Siliconix



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