SI4726CY PDF File ( Datasheet )

Si4726CY Vishay Siliconix N-Channel Synchronous MOSFETs with Break-Before-Make FEATURES D D D D 4.5- to 20-V Operation Driver Impedance 3 W Undervoltage Lockout Fast Switching Times (30 ns typ.) D D D D 20-V MOSFETs High Side: 0.0135 W @ VDD = 4.5 V Low Side: 0.0065 W @ VDD = 4.5 V Switching Frequency: 250 kH- to 1 MHz DESCRIPTION The Si4726CY n-channel synchronous MOSFET with break-before-make (BBM) is a high speed driver designed to operate in high frequency dc-dc switchmode power supplie