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| SI4684DY_RC Description |
| R-C Thermal Model Parameters
Si4684DY_RC
Vishay Siliconix
R-C Thermal Model Parameters
DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1]. When implemented in P-Spice, these values have matching characteristic curves to the Single Pulse Transient Thermal Impedance curves for the MOSFET.
R-C values for the electrical circuit in the Foster, Tank configuration are
Vaishali Semiconductor |
| Related Part Number |
Si4567DY | SI4684 Si4943CDY | Si4922BDY Si4606 | SI4558DY |
| DataSheet.es | 2020 | Contacto |