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| SI3590DV Description |
| N- and P-Channel 30-V (D-S) MOSFET
Si3590DV
Vishay Siliconix
N- and P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
N-Channel
30
0.077 at VGS = 4.5 V 0.120 at VGS = 2.5 V
P-Channel - 30
0.170 at VGS = - 4.5 V 0.300 at VGS = - 2.5 V
ID (A) 3 2 -2
- 1.2
G1 3 mm S2
G2
TSOP-6 Top View
16
25
34
D1 S1 D2
FEATURES Halogen-free According to IEC 61249-2-21
Definition TrenchFET® Power MOSFET Ultra Low RDS(on) N- and P-Channel for High
Efficiency Optimized for High-Side, Low-Side Minimized Conduction Loss
Vishay Siliconix |
| Related Part Number |
SI3150 | SI3420 Si3865DV | SI3493DDV SI3443DVPBF | Si3585DV |
| DataSheet.es | 2020 | Contacto |