SI2307 PDF File ( Datasheet )

Si2307 P-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low RDS(ON) Rugged and reliable Simple drive requirement SOT-23 package PRODUCT SUMMARY VDSS ID RDS(ON) (m ) Typ -20V -4.0A 80@ VGS=-4.5V 100 @ VGS=-2.5V NOTE The Si2307is available in a lead-free package D S G ABSOLUTE MAXIUM RATINGS TA=25 Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuousª@Tj=125 - Pulse d b Drain-source Diode Forward Currentª Maximum Power

MCC R Micro Commercial Components  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# SI2307 Features Halogen free available upon request by adding suffix "-HF" Epoxy meets UL 94 V-0 flammability rating Moisture Sensitivity Level 1 TrenchFET Power MOSFET Marking Code: S7 P-Channel Enhancement Mode Field Effect Transistor Maximum Ratings @ 25OC Unless Otherwise Specified Symbol VDS ID IS VGS PD RθJA TJ TSTG Parameter Drain-source Voltage Continuous Drain