P6015AT PDF File ( Datasheet )

P6015AT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 150V 60mΩ @VGS = 10V ID 26A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS, TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 26 16 80 Avalanche Current IAS 21 Avalanche Energy L = 0.1mH EAS 22 Power Dissipation TC = 25 °C TC = 100 °C PD 104 41 Operating Junction & Storage