NJ1800D PDF File ( Datasheet )

F-44 01, 99 NJ1800D Process Silicon Junction Field-Effect Transistor Ultra Low-Noise Pre-Amplifier Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C 65°C to +175°C D G Devices in this Databook based on the NJ1800D Process. Datasheet U290, U291 S Die Size = 0.052" X 0.052" All Bond Pads ≥ 0.004" Sq. Substrate is also Gate. At 25°C free air temperature: Static Electrical Characteristics Gate Source Brea

F-46 01, 99 NJ1800DL Process Silicon Junction Field-Effect Transistor Low-Current Low Gate Leakage Current High Input Impedance Low-Noise 10 mA +150°C 65°C to +175°C D G Absolute maximum ratings at 25¡C free-air temperature. Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts Device in this Databook based on the NJ1800DL Process. Datasheet IF1801 S Die Size = 0.052" X 0.052" All Bond Pads ≥ 0.004" Sq. Substrate is also Gate. At 25°C free air tempera