NJ16 PDF File ( Datasheet )

F-6 01, 99 NJ16 Process Silicon Junction Field-Effect Transistor Low Current Switch General Purpose Amplifier High Breakdown Voltage Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C 65°C to +175°C G S-D S-D G Die Size = 0.017" X 0.017" All Bond Pads = 0.004" Sq. Substrate is also Gate. Devices in this Databook based on the NJ16 Process. Datasheet 2N3954, 2N3955 2N3956 2N3957, 2N3958 2N4220, 2N4220A 2N4221,