NJ14AL PDF File ( Datasheet )

F-4 01, 99 NJ14AL Process Silicon Junction Field-Effect Transistor Low-Noise, High Gain Amplifier Rf AMP to 1.0 Ghz Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C 65°C to +175°C G S-D S-D G Die Size = 0.016" X 0.016" All Round Bond Pads = 0.0028" All Square Bond Pads = 0.004" Substrate is also Gate. Devices in this Databook based on the NJ14AL Process. Datasheet IF140, IF140A IF142 At 25°C free air te