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NESG2021M16-T3 PDF File ( Datasheet )

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NESG2021M16-T3-A
RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, C Band, Silicon Germanium, NPN

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NESG2021M16-T3 Description
NPN SiGe HIGH FREQUENCY TRANSISTOR

PRELIMINARY DATA SHEET NEC's NPN SiGe NESG2021M16 HIGH FREQUENCY TRANSISTOR FEATURES HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (Absolute Maximum) LOW NOISE FIGURE: NF = 0.9 dB at 2 GH- NF = 1.3 dB at 5.2 GH- HIGH MAXIMUM STABLE GAIN: MSG = 22.5 dB at 2 GH- LOW PROFILE M16 PACKAGE: 6-pin lead-less minimold M16 DESCRIPTION NEC's NESG2021M16 is fabricated using NEC s high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of applications including low nois
California Micro Devices Corp
California Micro Devices Corp



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