NE85619 PDF File ( Datasheet )

NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz E NE856 SERIES LOW NOISE FIGURE: 1.1 dB at 1 GH- HIGH COLLECTOR CURRENT: 100 mA HIGH RELIABILITY METALLIZATION LOW COST 00 (CHIP) VCC = 10 V, IC 7 mA MSG 4.0 3.5 3.0 2.5 NFMIN 2.0 1.5 1.0 0.4 0.5 1.0 2 3 4 5 GA MAG 20 Noise Figure, NF (dB) 15 Maximum Associated Gain, Maximum Stable Gain, Associated Gain, MAG, MSG, GA (dB) rs e b m : u DESCRIPTION E n ot T t n O r . e a N r n p a g E S si ng

SILICON TRANSISTOR NE85619 , 2SC5006 JEITA Part No. NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The NE85619 , 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers fromVHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitride passivated base surface, process (NEST2 process) which is a proprietary