NE68019-T1 PDF File ( Datasheet )

NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GH- LOW NOISE FIGURE: 1.7 dB at 2 GH- 2.6 dB at 4 GH- HIGH ASSOCIATED GAIN: 12.5 dB at 2 GH- 8.0 dB at 4 GH- EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE 00 (CHIP) NE680 SERIES E B 35 (MICRO-X) NEC's NE680 series of NPN epitaxial silicon transistors is designed for low noise, high gain and low cost applications. Both the chip and micro-x versions are suitable for applications up to 6 GHz. The NE680