NE662M16-T3 PDF File ( Datasheet )

NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES HIGH GAIN BANDWIDTH: fT = 25 GH- LOW NOISE FIGURE: NF = 1.1 dB at 2 GH- HIGH MAXIMUM STABLE GAIN: 20 dB at f = 2 GH- NEW LOW PROFILE M16 PACKAGE: Flat Lead Style with a height of just 0.50mm NE662M16 DESCRIPTION The NE662M16 is fabricated using NEC's UHS0 25 GH- fT wafer process. With a typical transition frequency of 25 GH- the NE662M16 is usable in applications from 100 MH- to over 10 GHz. The NE662M16 provides excellent low voltage, low cu

DISCONTINUED NPN SILICON RF TRANSISTOR NE662M16 , 2SC5704 NPN SILICON RF TRANSISTOR FOR LOW NOISE HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD FEATURES Ideal for low noise high-gain amplification and oscillation at 3 GH- or over NF = 1.1 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GH- High fT: fT = 25.0 GH- TYP. @ VCE = 3 V, IC = 30 mA, f = 2 GH- 6-pin lead-less minimold package ORDERING INFORMATION Part Number NE662M16-A 2SC5704-A NE662M16-T3-A 2SC5704-T3-A Quantity 50 pcs (Non reel) 1