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NE6510179 PDF File ( Datasheet )
NEC
NE6510179A-T1
RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Hetero-junction FET
Datasheet| Distributor | Stock | 1 | Link | ||
|---|---|---|---|---|---|
| SHENGYU ELECTRONICS | 4,402 | 1.5314 | Visit Site | ||
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| NE6510179 Description |
| 1 W L-BAND POWER GaAs HJ-FET
DATA SHEET
N-CHANNEL GaAs HJ-FET
NE6510179A
1 W L-BAND POWER GaAs HJ-FET
DESCRIPTION
The NE6510179A is a 1 W GaAs HJ-FET designed for middle power transmitter applications for mobile communication and wireless PC LAN systems. It is capable of delivering 1 W of output power (CW) with high linear gain, high efficiency and excellent distortion. Reliability and performance uniformity are assured by NEC’s stringent quality and control procedures.
FEATURES
: Pout = +31.5 dBm TYP. @VDS = 3.5 V, I
 NEC |
| 1 W L-BAND POWER GaAs HJ-FET
DATA SHEET
N-CHANNEL GaAs HJ-FET
NE6510179A
1 W L-BAND POWER GaAs HJ-FET
DESCRIPTION
The NE6510179A is a 1 W GaAs HJ-FET designed for middle power transmitter applications for mobile communication and wireless PC LAN systems. It is capable of delivering 1 W of output power (CW) with high linear gain, high efficiency and excellent distortion. Reliability and performance uniformity are assured by NEC’s stringent quality and control procedures.
FEATURES
: Pout = +31.5 dBm TYP. @VDS = 3.5 V, I
NEC |
| Related Part Number |
NE664M04-T2-A | NE662M16-T3-A NE662M16-A | NE664M04-A NE662M04 | NE688M13 |
| DataSheet.es | 2020 | Contacto |