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NE6500379 PDF File ( Datasheet )
NEC
NE6500379A-T1
RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET
Datasheet| Distributor | Stock | 1 | Link | ||
|---|---|---|---|---|---|
| Win Source | 1,170 | Visit Site | |||
| Run Hong Electronics | 1,520 | 0.992 | Visit Site | ||
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| NE6500379 Description |
| 3W L / S-BAND POWER GaAs MESFET
DATA SHEET
N-CHANNEL GaAs MES FET
NE6500379A
3W L, S-BAND POWER GaAs MESFET
DESCRIPTION
The NE6500379A is a 3W GaAs MESFET designed for middle power transmitter applications for mobile communication handset and base station systems. It is capable of delivering 3 watt of output power (CW) with high linear gain, high efficiency and excellent distortion. Reliability and performance uniformity are assured by NEC’s stringent quality and control procedures.
FEATURES
High Output Power High Line
 NEC |
| 3W L / S-BAND POWER GaAs MESFET
DATA SHEET
N-CHANNEL GaAs MES FET
NE6500379A
3W L, S-BAND POWER GaAs MESFET
DESCRIPTION
The NE6500379A is a 3W GaAs MESFET designed for middle power transmitter applications for mobile communication handset and base station systems. It is capable of delivering 3 watt of output power (CW) with high linear gain, high efficiency and excellent distortion. Reliability and performance uniformity are assured by NEC’s stringent quality and control procedures.
FEATURES
High Output Power High Line
NEC |
| Related Part Number |
NE664M04-T2-A | NE662M16-T3-A NE662M16-A | NE664M04-A NE662M04 | NE688M13 |
| DataSheet.es | 2020 | Contacto |